| 摘要 |
PURPOSE: A metal contact formation method of semiconductor devices is provided to shorten a processing time and to improve a productivity by using two-step contact processes. CONSTITUTION: A lower plug layer(21) to contact with one conductive region and a bit line(22) to contact with other conductive region are formed on a substrate. After forming the first interlayer dielectric(23), a storage node formation region and the first contact region are formed by selectively etching the first interlayer dielectric(23). By sufficiently filling materials into the regions and planarizing, a lower electrode(26a) and the first contact layer(27) are simultaneously formed in the storage node formation region and the first contact region, respectively. After forming an upper gate(28) on the lower electrode(26a), the second interlayer dielectric are formed on the resultant structure. Then, the second contact region is defined to expose the first contact layer(27) by selectively etching the second interlayer dielectric.
|
