IMAGE SENSOR

摘要

PURPOSE: An image sensor is provided to improve optical characteristics by minimizing light reflectance from a silicon substrate. CONSTITUTION: A photodiode(PD) is formed in a substrate(40) of a cell region. A silicide layer(42) is formed on the substrate(40) of a peripheral region. An insulating layer(43) is formed on the entire surface of the resultant structure. An anti-reflective layer(41) for matching an index of reflection and for preventing a formation of silicide is formed between the substrate(40) and the insulating layer(43) of the cell region. The anti-reflective layer(41) is composed of silicon nitride and has an index of reflection from 1.7 to 2.7.