| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent affection of a passing gate by forming a protrudent isolation layer at lower of the first gate line. CONSTITUTION: A gate oxide layer(33), a doped polysilicon layer(34) and a nitride layer are sequentially formed on a semiconductor substrate(31). After forming a trench by sequentially etching the nitride layer, the doped polysilicon layer(34), the gate oxide layer(33) and the substrate(31), an isolation layer(37) is formed by filling an insulating layer into the trench. After removing the nitride layer, a barrier layer(38), a metal film(39) and a hard mask(40) are sequentially formed on the resultant structure. By patterning the layers, the first gate line(42) including the barrier layer(38) and the metal film(39) is formed on an isolation layer, and the second gate line(42a) including the gate oxide layer(33), the doped polysilicon layer(34), the barrier layer(38) and the metal film(39) is formed on an active region. Since the isolation layer(37) formed on the isolation region has a protrudent structure, the first gate line(42) is spaced apart from the substrate(31).
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