| 摘要 |
PURPOSE: A semiconductor device is provided to reduce a leakage current by forming a Schottky barrier at a depletion region of a substrate. CONSTITUTION: A source and drain region(23,23a) are formed in a semiconductor substrate(21). A gate electrode(25) having a gate insulating layer(24) is formed on the substrate between the source and drain region(23,23a). A spacer(26) is formed at both sidewalls of the gate electrode(25). A metal film(27) is formed on the exposed source and drain region(23,23a). Thereby, a Schottky barrier diode is then formed including the substrate(21), the source or drain region(23,23a) and the metal film(27).
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