| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to improve a capacitance and to improve a driving seed by using a copper film having an HSG(Hemi-Spherical Grain) and a low resistivity as a lower electrode. CONSTITUTION: An interlayer dielectric(202) having a conductive plug(204) is formed on a substrate(200). A sacrificial layer having a storage node contact is formed to expose the conductive plug(204) on the interlayer dielectric(202). A copper film having HSGs and a buried oxide layer are sequentially formed on the resultant structure. The surface of the sacrificial layer is exposed by etch-back of the copper film and the buried oxide layer. By removing the remaining sacrificial layer and the buried oxide layer, a lower electrode(220) is formed. Then, a dielectric film and an upper electrode are sequentially formed on the lower electrode(220).
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