| 摘要 |
PURPOSE: A method for depositing a tungsten nitride film(WNx) and a tungsten film is provided to restrain a line peeling by depositing the WNx/W film at a high temperature, thereby reducing a resistivity and a stress of the WNx and W film. CONSTITUTION: A tungsten nitride(WNx) film is deposited by supplying mixed gases of Ar and N2 in the stepper chamber having a tungsten target(11). Then, a tungsten film is deposited on the WNx film by supplying Ar gas. At the time, the WNx and W film are deposited at a high temperature higher than 150°C. Also, the deposition pressure of the WNx and W film is 1-40 mTorr.
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