| 摘要 |
PURPOSE: A floating trap type memory device of a non-volatile semiconductor memory device is provided to enhance a programming speed and an erasing speed by improving a structure of the floating trap type memory device. CONSTITUTION: A plurality of active regions are formed on a semiconductor substrate(10). A string selection gate electrode(117s) and a ground selection gate electrode(117g) are formed on the active regions. A plurality of memory gate electrodes(117m) are formed between the string selection gate electrode(117s) and the ground selection gate electrode(117g). A tunneling insulating layer(110), a charge storage layer(112), and a blocking insulating layer(114) are formed between the active regions and the memory gate electrodes(117m). A doping region(102) is formed at both sides of the string selection gate electrode(117s), the ground selection gate electrode(117g), and the memory gate electrodes(117m). A common source line(CSL) is arrayed at an opposite side to the memory gate electrodes(117m). The semiconductor substrate(10) including the gate electrodes(117g,117m,117s) and the common source line(CSL) is covered by an interlayer dielectric(120). |
