METHOD FOR FABRICATING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact plug of a semiconductor device is provided to avoid a dishing phenomenon of a mask insulation layer or a contact plug and to prevent degradation of a characteristic by twice performing a chemical mechanical polishing(CMP) process using slurry having a great difference of etch selectivity on a defect exposing a multilayer having different polishing characteristic. CONSTITUTION: A gate electrode(33) is formed. A hard mask layer is formed in the upper portion of the gate electrode. An interlayer dielectric(37) is formed on the resultant structure. The interlayer dielectric is etched to form a landing plug contact hole. Poly(39) as a landing plug conductive layer filling the landing plug contact hole is formed on the resultant structure. The first CMP process is performed to expose the hard mask layer. The second CMP process is performed to planarize the hard mask layer, the interlayer dielectric and the landing plug conductive layer.