| 摘要 |
PURPOSE: A semiconductor device is provided to sufficiently decrease the stress applied by a nitride layer to a substrate and to reduce a junction leakage current by interposing an oxide layer functioning as a buffer layer between the substrate and the nitride layer. CONSTITUTION: A gate insulation layer(210), a gate in which a polysilicon layer(220) and a tungsten layer(230) are stacked, and an insulation layer(240) are sequentially stacked in a cell region of a semiconductor substrate(200). A spacer is formed on the side of the insulation layer and the gate, and is formed on the substrate. The first oxide layer, the first nitride layer, the second oxide layer and the second nitride layer are sequentially stacked in the spacer.
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