| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a damage of a cell region due to attacks of a wet-etchant when wet-etching a BPSG layer formed at a peripheral region. CONSTITUTION: A BPSG layer(2) as an interlayer dielectric is deposited on a semiconductor substrate(100) defined by a cell region and a peripheral region. A contact hole is formed in the cell region by selectively etching the BPSG layer(2). A conductive layer(3) is deposited on the resultant structure so as to fill the contact hole. After etch-back the conductive layer(3), a thin silicon oxide layer(6) is formed on the damaged surface of the BPSG layer(2). After forming a photoresist pattern(5) on the cell region, the exposed BPSG layer(2) of the peripheral region is wet-etched by using the photoresist pattern(5) as a mask.
|
