METHOD FOR FORMING CONTACT HOLE FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole for a semiconductor device is provided to maintain a shape of contact hole by forming a buffer layer on a sidewall of the contact hole. CONSTITUTION: An interlayer dielectric(10) is formed on a base layer(2) of a substrate(1). The interlayer dielectric(10) is formed with plural layers(11,12,13) of different material. A photoresist pattern is formed on the interlayer dielectric(10) in order to a contact hole(C). The substrate(1) is loaded on a dry etch chamber. A buffer gas is injected into a gas inlet hole of the dry etch chamber. A buffer layer(40) is formed on a sidewall(CS) of the interlayer dielectric(10). The photoresist pattern is removed. The substrate(1) is loaded on a wet cleaning bath. A cleaning process is performed to remove residues from the interlayer dielectric(10) and the contact hole(C).