| 摘要 |
PURPOSE: A method for manufacturing a phase shift mask of semiconductor devices is provided to simplify processing of a tri-tone PSM(Phase Shift Mask). CONSTITUTION: A phase shift layer(22) made of MoSiON and a light shielding layer(23) composed of Cr/CrOx are sequentially formed on a quartz substrate(21). The first photoresist layer and the second photoresist layer are sequentially coated on the light shielding layer(23), wherein the second photoresist layer has a good light sensitivity compared to the first photoresist layer. By patterning simultaneously the second and first photoresist layer, the portions of the light shielding layer(23) and the first photoresist layer are exposed. The exposed light shielding layer(23) is removed by using the second photoresist pattern as a mask, and the phase shift layer(22) is selectively removed by using the first photoresist pattern as a mask.
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