| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to form a semiconductor device having an extremely low dielectric constant by adding fluorine to a silica network to maintain the mechanical intensity of a conventional SiOCH insulation layer while polarizability is reduced. CONSTITUTION: Silicon source gas, fluorine source gas, hydrocarbon source gas and an oxide agent are injected into a chemical vapor deposition(CVD) chamber in which a semiconductor substrate is disposed. The gases are mixed in the CVD chamber. Activation energy is applied to form a SiOCHF thin film on the semiconductor substrate. A radio frequency(RF) generator, an ozone generator or ultraviolet is used to generate the activation energy.
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