| 摘要 |
PURPOSE: A fabrication method of a thin film transistor is provided to exactly obtain CD(Critical Dimension) of etch patterns by performing a flow processing to a photoresist pattern. CONSTITUTION: After forming the first conductive layer on a substrate(20) having a lower layer(21), a gate electrode is formed by selectively etching the first conductive layer. A gate insulating layer is then formed on the gate electrode. After forming the second conductive layer(24), an anti-reflective coating(30) is formed on the second conductive layer(24). The anti-reflective coating(30) is selectively etched by using a photoresist pattern(35) as a mask. After performing a flow process to the photoresist pattern(35), the second conductive layer(24) is then etched by using the flowed photoresist pattern(35) as a mask. Source and drain region are formed by implanting dopants into the second conductive layer(24).
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