发明名称 METHOD FOR CUTTING OUT AT LEAST A THIN LAYER IN A SUBSTRATE OR INGOT, IN PARTICULAR MADE OF SEMICONDUCTOR MATERIAL(S)
摘要 <p>An apparatus for cutting at least one thin layer from a substrate or ingot forming element for an electronic or optoelectronic or optical component or sensor. This apparatus includes a device for directing a pulse of energy into the substrate or forming element wherein the pulse has a duration shorter than or of the same order as that needed by a sound wave to pass through the thickness of the weakened zone, and the energy of the pulse is sufficient to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein. The apparatus also includes an assembly for holding or orienting the substrate or ingot forming element so that the energy pulse is completely uniformly directed over the entire surface, through the face and into the substrate or ingot forming element to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein.</p>
申请公布号 EP1273035(A2) 申请公布日期 2003.01.08
申请号 EP20010927984 申请日期 2001.04.17
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 ROCHE, MICHEL
分类号 H01L21/304;H01L21/762;B23K26/40;H01L21/301;(IPC1-7):H01L21/762 主分类号 H01L21/304
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