| 摘要 |
PURPOSE: A method for manufacturing a capacitor of semiconductor devices is provided to increase surface area of a storage node electrode and to prevent collapse of the storage node electrode due to a spin dry. CONSTITUTION: The first insulating layer(38) is formed on a silicon substrate(20) having bit lines. After forming the first contact hole by selectively etching the first insulating layer(38), a plug film(42a) is formed in the first contact hole. An etch stop layer(44) and the second insulating layer(46) are sequentially formed on the resultant structure. The second contact hole is formed to expose the plug film(42a) by selectively etching the second insulating layer(46) and the etch stop layer(44). The exposed plug film(42a) is partially etched. A lower electrode(50) is formed on the plug film(42a). A dielectric film and an upper electrode are sequentially formed on the lower electrode(50).
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