发明名称 BURN-TEST METHOD OF WAFER
摘要 PURPOSE: A burn-test method of a wafer is provided to increase a detection ratio of a weak cell regarding a defect of the cell by applying stress to an isolation layer as well as a landing plug contact so that the defect is detected through a wafer burn-in test before the cell is packaged. CONSTITUTION: A wordline is selected which is divided into the first and second blocks according to a wordline selection signal coded by two addresses. A bitline is divided into the first and second blocks. The first voltage source for selectively applying the first and second voltages applies a voltage to the first bitline block. The second voltage source for selectively applying the first and second voltages applies a voltage to the second bitline block.
申请公布号 KR20030001606(A) 申请公布日期 2003.01.08
申请号 KR20010036383 申请日期 2001.06.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, JONG TAE
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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