发明名称 METHOD FOR IMPROVING GAP-FILL CHARACTERISTIC BY USING SURFACE CATALYST
摘要 PURPOSE: A method for improving a gap-fill characteristic by using surface catalyst is provided to ultimately increase yield by using a compound including a halogen element as the surface catalyst in forming a metal layer. CONSTITUTION: After an interlayer dielectric(3) is formed on a substrate(1) having the first metal layer(2), the interlayer dielectric is selectively etched to expose the surface of the metal layer. A surface catalyst compound is induced to make the surface catalyst(5) absorbed to the surface of the exposed first metal layer. The second metal layer(6) is formed on the resultant structure to be exchanged for the surface catalyst so that the second metal layer comes in contact with the first metal layer.
申请公布号 KR20030001584(A) 申请公布日期 2003.01.08
申请号 KR20010036361 申请日期 2001.06.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, UI SEONG
分类号 H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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