METHOD FOR FABRICATING DUMMY PATTERN

摘要

PURPOSE: A method for fabricating a dummy pattern is provided to improve yield and an electrical characteristic by basically preventing contamination caused by particles and contact resistance caused by the dummy pattern used in forming a plug by a selective epitaxial growth(SEG) method. CONSTITUTION: A gate electrode(31) and a hard mask(32) are sequentially formed on a substrate(30) which has passed through a predetermined process. An etch barrier layer(33) and an interlayer dielectric(34) are sequentially formed on the resultant structure. The interlayer dielectric is selectively etched to form a contact hole(35) exposing the upper portion of the substrate. A dummy photoresist pattern is formed on the resultant structure including the contact hole. The interlayer dielectric is etched by using the dummy photoresist pattern as a mask so that the interlayer dielectric has selectivity with the hard mask. An SEG method is used to form a plug filling the contact hole.