发明名称 APPARATUS AND METHOD FOR CLEANING HIGH DENSITY PCVD CHAMBER
摘要 PURPOSE: An apparatus and a method for cleaning a high density PCVD(Plasma Chemical Vapor Deposition) chamber are provided to prevent contamination and damages of a wafer by injecting uniformly cleaning gases into the inside of a chamber. CONSTITUTION: A PCVD chamber includes the first chamber(30a) and the second chamber(30b). A dome-shaped upper electrode(12) is installed at each upper portion of the first chamber(30a) and the second chamber(30b). The RF(Radio Frequency) power is applied to the upper electrode(12). A chuck assembly(16) is installed at each lower portion of the first chamber(30a) and the second chamber(30b). A lower electrode(14) is formed on an upper portion of the chuck assembly(16). The RF power is applied to the lower electrode(14). A plurality of process gas nozzles(18) are formed on sidewalls of the first chamber(30a) and the second chamber(30b). A plurality of cleaning gas nozzles(32a,32b) are formed at each lower portion of the process gas nozzles(18).
申请公布号 KR20030001695(A) 申请公布日期 2003.01.08
申请号 KR20010036524 申请日期 2001.06.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, SEONG JUN;JIN, GYEONG HWAN
分类号 H01L21/205;B08B7/00;C23C16/44;H01L21/00;(IPC1-7):H01L21/205 主分类号 H01L21/205
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