发明名称 |
APPARATUS AND METHOD FOR CLEANING HIGH DENSITY PCVD CHAMBER |
摘要 |
PURPOSE: An apparatus and a method for cleaning a high density PCVD(Plasma Chemical Vapor Deposition) chamber are provided to prevent contamination and damages of a wafer by injecting uniformly cleaning gases into the inside of a chamber. CONSTITUTION: A PCVD chamber includes the first chamber(30a) and the second chamber(30b). A dome-shaped upper electrode(12) is installed at each upper portion of the first chamber(30a) and the second chamber(30b). The RF(Radio Frequency) power is applied to the upper electrode(12). A chuck assembly(16) is installed at each lower portion of the first chamber(30a) and the second chamber(30b). A lower electrode(14) is formed on an upper portion of the chuck assembly(16). The RF power is applied to the lower electrode(14). A plurality of process gas nozzles(18) are formed on sidewalls of the first chamber(30a) and the second chamber(30b). A plurality of cleaning gas nozzles(32a,32b) are formed at each lower portion of the process gas nozzles(18).
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申请公布号 |
KR20030001695(A) |
申请公布日期 |
2003.01.08 |
申请号 |
KR20010036524 |
申请日期 |
2001.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, SEONG JUN;JIN, GYEONG HWAN |
分类号 |
H01L21/205;B08B7/00;C23C16/44;H01L21/00;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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