| 摘要 |
PURPOSE: A power supply circuit of a sense amplifier in a semiconductor memory device is provided to improve a characteristic of AC, perform a stable operation, and reduce a chip size by preventing an overshoot phenomenon generated from a driving process of an external supply voltage. CONSTITUTION: A sense amplifier power generation portion(10) generates a sense amplifier power(RTO). A control signal generation portion(20) generates control signals(CON11,CON12) for controlling the sense amplifier power generation portion(10). A control voltage generation portion(30) generates a control voltage(VCON) to the control signal generation portion(20). The sense amplifier power generation portion(10) is formed with an NMOS transistor(NM11) and a PMOS transistor(PM11). The control signal generation portion(20) is formed with a timing control portion(21) for controlling timing of the control signals(CON11,CON12) and driving portions(DRV1,DRV2) for outputting the control signals(CON11,CON12). The driving portion(DRV1) is driven by the control voltage(VCON) higher than a core voltage(VCORE).
|
