发明名称 TEMPERATURE SENSOR
摘要 PURPOSE: A temperature sensor is provided to detect temperature by comparing the reference voltage and the voltage varying linearly in accordance with the temperature. CONSTITUTION: A temperature sensor comprises a bandgap reference generator for generating a bandgap voltage(VBG) and a temperature voltage(TEMP) varying in accordance with the temperature; and an analog/digital converter for converting the temperature voltage into a digital signal, based on the bandgap voltage. The bandgap reference generator includes a PMOS chain where a drain and a source are connected; a current mirror(40) constituted by a PMOS chain where gates of the PMOS chain are connected; an OP AMP(30) constituted by the combination of the PMOS chain of the current mirror, a differential amplifier and NMOS; a current generator(50) constituted by the combination of the current mirror, OP AMP, a compensation condenser(Cc), a resistor(R2) and bipolar junction transistors(PNP2,PNP3); and a bipolar junction transistor(PNP1), a resistor(R1) and a variable resistor(R3).
申请公布号 KR20030002276(A) 申请公布日期 2003.01.08
申请号 KR20010039050 申请日期 2001.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LIM, JI SU
分类号 G01K7/00;(IPC1-7):G01K7/00 主分类号 G01K7/00
代理机构 代理人
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