| 摘要 |
PURPOSE: A semiconductor device and a method for fabricating the same are provided to prevent the degradation of a gate oxide layer by preventing the permeation of doping ions of a polysilicon layer for gate electrode into a gate oxide layer. CONSTITUTION: An isolation layer(12) is formed on a field region of a substrate(10) in order to isolate an active region of the substrate(10). A gate oxide layer(14), an amorphous polysilicon layer(20), and a polysilicon layer(30) as a gate electrode pattern are deposited on a predetermined region of the active region of the substrate(10). A source region(S) and a drain region(D) are formed on the active region of the substrate(10). The second conductive type dopants are implanted into the polysilicon layer(30), the source region(S), and the drain region(D). Nitrogen ions are implanted into the polysilicon layer(30).
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