发明名称 |
METHOD FOR MANUFACTURING PHASE SHIFT MASK |
摘要 |
PURPOSE: A fabrication method of a phase shift mask is provided to prevent a failure of patterns and a scattering of light in a light shifting transmission region by forming a chrome spacer at inner walls of the light shifting transmission region. CONSTITUTION: After forming a chrome film on a quartz substrate(10), a chrome pattern(12') is formed by selectively etching the chrome film using the first resist pattern as a mask, thereby defining a light transmission region(A). The second resist pattern is formed on the chrome pattern(12'). A light shifting transmission region(B) is formed by etching the quartz substrate(10) using the second resist pattern as a mask. After removing the second resist pattern, chrome spacers are formed at inner walls of the light transmission and light shifting transmission region(A,B).
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申请公布号 |
KR20030001643(A) |
申请公布日期 |
2003.01.08 |
申请号 |
KR20010036420 |
申请日期 |
2001.06.25 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, YEONG GI;PARK, SEONG NAM |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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