发明名称 METHOD FOR MANUFACTURING PHASE SHIFT MASK
摘要 PURPOSE: A fabrication method of a phase shift mask is provided to prevent a failure of patterns and a scattering of light in a light shifting transmission region by forming a chrome spacer at inner walls of the light shifting transmission region. CONSTITUTION: After forming a chrome film on a quartz substrate(10), a chrome pattern(12') is formed by selectively etching the chrome film using the first resist pattern as a mask, thereby defining a light transmission region(A). The second resist pattern is formed on the chrome pattern(12'). A light shifting transmission region(B) is formed by etching the quartz substrate(10) using the second resist pattern as a mask. After removing the second resist pattern, chrome spacers are formed at inner walls of the light transmission and light shifting transmission region(A,B).
申请公布号 KR20030001643(A) 申请公布日期 2003.01.08
申请号 KR20010036420 申请日期 2001.06.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, YEONG GI;PARK, SEONG NAM
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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