| 摘要 |
PURPOSE: A method for fabricating a metal oxide semiconductor field effect transistor(MOSFET) is provided to simultaneously form a lightly-doped-drain(LDD) and a source/drain and to control the length of a sidewall oxide layer, by using a condition for forming a spacer. CONSTITUTION: A gate oxide layer(110) is formed on a semiconductor substrate(100). A gate electrode(120) is formed on the gate oxide layer. An oxide layer is formed on the gate electrode. An insulation layer block is formed on the sidewall of the gate electrode. A predetermined thickness corresponding to the width of the LDD is removed from the insulation layer block to form an offset region between a channel region of the substrate and a source/drain region of the substrate by an etch process. Impurity ions are implanted into the semiconductor substrate to form a source/drain region(190) of an LDD structure having an offset width by a self-align method.
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