METHOD FOR FABRICATING VIA HOLE THROUGH DUAL DAMASCENE PROCESS

摘要

PURPOSE: A method for fabricating a via hole through a dual damascene process is provided to control an increase in via resistance by easily eliminating a photoresist layer hardened in a via first method. CONSTITUTION: The first interlayer dielectric(33) and the second interlayer dielectric(35) are sequentially formed on the first metal interconnection. The first and second interlayer dielectrics are selectively etched to form a via hole(39) exposing the first metal interconnection. An organic anti-reflective layer is formed on the second interlayer dielectric to fill the bottom of the via hole. A trench mask(41) using a photoresist layer is formed on the organic anti-reflective layer. The organic anti-reflective layer and the second interlayer dielectric are etched by using the trench mask to form a trench on the via hole. The first plasma treatment process is performed to eliminate a hardened material remaining on the bottom of the via hole. The second plasma treatment process is performed to strip the trench mask.