| 摘要 |
PURPOSE: A method for manufacturing a capacitor of FeRAM(Ferroelectric Random Access Memory) is provided to reduce CD gains and to restrain generation of fence by using double hard mask. CONSTITUTION: A lower electrode(21), a ferroelectric film(22) and an upper electrode(23) are sequentially stacked on a semiconductor substrate. A dielectric hard mask(24) and a metallic hard mask(25) are sequentially formed on the upper electrode(23). A photoresist pattern is formed on the metallic hard mask(25) so as to define a capacitor. The metallic hard mask(24) and the dielectric hard mask(24) are simultaneously etched by using the photoresist pattern. After removing the photoresist pattern, the upper electrode, the ferroelectric film and the lower electrode are simultaneously etched by using the metallic hard mask as an etch stopper.
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