| 摘要 |
PURPOSE: A control circuit for varying width of a pulse according to an operating method of a semiconductor memory device and an internal supply voltage generation circuit including the same are provided to supply internal supply voltages by changing width of pulses. CONSTITUTION: A control circuit(300) includes a plurality of pulse generators(310,330,340,350), a plurality of expanded pulse generators(360,370,380,390), and a logical sum circuit(G1). The pulse generators(310,330,340,350) and the expanded pulse generators(360,370,380,390) are formed with the same components. The pulse generators(310,330,340,350) generate selectively the first pulses(P1_1,P1_2,P1_3,P1_4) or the second pulses(P1E_1,P1E_2,P1E_3,P1E_4) in response to sensing signals(PS1,PS2,PS3,PS4) and a sense signal(P3). The width of the second pulses(P1E_1,P1E_2,P1E_3,P1E_4) are wider than the width of the first pulses(P1_1,P1_2,P1_3,P1_4). The first pulses(P1_1,P1_2,P1_3,P1_4) and the second pulses(P1E_1,P1E_2,P1E_3,P1E_4) are applied to drivers for supplying interval supply voltages of four memory banks. The expanded pulse generators(360,370,380,390) generate extended pulses(P2_1,P2_2,P2_3,P2_4) in response to the first pulses(P1_1,P1_2,P1_3,P1_4) or the second pulses(P1E_1,P1E_2,P1E_3,P1E_4).
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