| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to restrain an interface reaction between a lower electrode and a dielectric film by using double dielectric film composed of TaON and Ta2O5. CONSTITUTION: An interlayer dielectric(37) having a contact hole is formed on a substrate(31) having a plug(33). A lower electrode is formed in the contact hole. The first dielectric film(39a) made of TaON is formed on the lower electrode by using Ta(OC2H5)5 as a source material. Then, the second dielectric film(39b) made of Ta2O5 is formed on the TaON layer(39a) by in-situ using same source material of Ta(OC2H5)5. An upper electrode(40) is formed on the second dielectric film(39b).
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