| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to minimize formation of WOx and to prevent a whisker of silicon by performing a selective oxidation after depositing a silicon nitride layer. CONSTITUTION: A gate electrode on which stacked sequentially a polysilicon layer(23), a barrier layer(24), a tungsten film(25) and a cap insulating layer(26) is formed on a semiconductor substrate(21) of an active region. A silicon nitride(SiNx) layer(27) is then formed on the entire surface of the resultant structure. A selective oxide layer(23a) is grown at both sides of the polysilicon layer(23) by performing a selective oxidation of the polysilicon layer(23) of the stacked gate electrode. A spacer is then formed at both sidewalls of the gate electrode.
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