发明名称 |
HIGHLY THERMAL CONDUCTIVE COMPOSITE MATERIAL AND PRODUCTION METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide an SiC-Cu based highly thermal conductive composite material which is provided with a low thermal expansion coefficient (4.5 to 10×10<-6> /K) and a high thermal conductivity (>=200W/mK), and is optimum for the heat sink and package of electronic equipment at a low cost. SOLUTION: This composite material has a porous SiC perform having a skeleton structure in 20 to 75% by the volume ratio, and Cu is infiltrated therein. The boundary therebetween is provided with a reaction preventive layer. The reaction preventive layer is formed of a thin film of 0.01 to 10μm consisting of carbon or carbide of at least one kind of element selected from Cr, Nb, Ta and W.
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申请公布号 |
JP2003002770(A) |
申请公布日期 |
2003.01.08 |
申请号 |
JP20010180968 |
申请日期 |
2001.06.15 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
SHOBU KAZUHISA;SAKAMOTO MITSURU;TAWARA TATSUO;HIRAI HISATOSHI;KITAHARA AKIRA;SATO TOMIO;YAMASHITA ISAMU |
分类号 |
C04B41/88;C22C1/10;(IPC1-7):C04B41/88 |
主分类号 |
C04B41/88 |
代理机构 |
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