发明名称 HIGHLY THERMAL CONDUCTIVE COMPOSITE MATERIAL AND PRODUCTION METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide an SiC-Cu based highly thermal conductive composite material which is provided with a low thermal expansion coefficient (4.5 to 10×10<-6> /K) and a high thermal conductivity (>=200W/mK), and is optimum for the heat sink and package of electronic equipment at a low cost. SOLUTION: This composite material has a porous SiC perform having a skeleton structure in 20 to 75% by the volume ratio, and Cu is infiltrated therein. The boundary therebetween is provided with a reaction preventive layer. The reaction preventive layer is formed of a thin film of 0.01 to 10μm consisting of carbon or carbide of at least one kind of element selected from Cr, Nb, Ta and W.
申请公布号 JP2003002770(A) 申请公布日期 2003.01.08
申请号 JP20010180968 申请日期 2001.06.15
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 SHOBU KAZUHISA;SAKAMOTO MITSURU;TAWARA TATSUO;HIRAI HISATOSHI;KITAHARA AKIRA;SATO TOMIO;YAMASHITA ISAMU
分类号 C04B41/88;C22C1/10;(IPC1-7):C04B41/88 主分类号 C04B41/88
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