| 摘要 |
PROBLEM TO BE SOLVED: To establish conditions for pulling a silicon single crystal and for heat treatment of a wafer, so as to obtain a silicon single crystal wafer having a defect-free layer are from COP to a sufficient depth from the surface when the silicon single crystal having a diameter of >=300 mm is pulled, processed to a wafer and subjected to thermal treatment. SOLUTION: The silicon single crystal wafer having a diameter of >=300 mm and characterized in that the defect-free layer free from COP exists in a region from the surface to a depth of >=3μm is provided. When the silicon single crystal having a diameter of >=300 mm is grown by a CZ method in which nitrogen is doped, a method for producing the silicon single crystal, which comprises growing while controlling the value of V/G (mm<2> /K.min) to be not more than 0.17, wherein, V (mm/min) is defined as the pulling speed and G (K/mm) is defined as the average value of the temperature gradient in the range from the melting point of silicon to 1,400 deg.C in the pulling direction in the crystal, is also provided. Further, in the method for producing the silicon single crystal wafer by subjecting the silicon single crystal wafer having a diameter of >=300 mm to thermal treatment, a method of producing the silicon single crystal wafer, in which the silicon single crystal wafer is subjected to heat treatment at a temperature of >=1,230 deg.C for at least 1 hour under an atmosphere of an inert gas, hydrogen or a gaseous mixture of these gases, is provided.
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