| 摘要 |
PURPOSE: A method for fabricating a dual trench of semiconductor devices is provided to prevent a misalignment of a mask and to easily control a width of dual trench by using the second photoresist layer as a barrier layer. CONSTITUTION: A hard mask(120) is formed on a silicon substrate(100). The first trench(140) is formed by sequentially etching the hard mask(120) and the silicon substrate(100) using the first photoresist pattern as a mask. After removing the first photoresist pattern, the second photoresist layer is coated on the resultant structure including the first trench(140). The second trench(160) is formed by an SAC(Self Align Contact) etching using the second photoresist layer without patterning as a mask and a barrier layer. By controlling the coated thickness of the second photoresist layer, the width of the dual trench is defined.
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