| 摘要 |
PURPOSE: A method for fabricating a capacitor is provided to remarkably reduce a bridge fail by making an insulation layer between capacitors have a height larger than that of the capacitor so that the capacitors are more reliably and three-dimensionally insulated from each other. CONSTITUTION: At least one contact hole is formed on an insulation layer(210) on a semiconductor substrate(200) which has various semiconductor elements and is defined as a cell region and a peripheral circuit region. A polysilicon layer(230) is formed on the resultant structure including the contact hole. A photoresist layer is formed on the polysilicon layer in the cell region. The polysilicon layer in the peripheral circuit region is removed. A planarization process is performed to make the photoresist layer and the polysilicon layer under the photoresist layer have the same plane as the insulation layer so that at least one separated lower electrode is formed. A predetermined depth of the upper portion of the lower electrode is eliminated. After the photoresist layer is removed, a metastable polysilicon(MPS) layer(260) is grown on the lower electrode. A dielectric layer and an upper electrode(270) are formed on the MPS layer.
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