| 摘要 |
PURPOSE: A method for fabricating an interconnection through a dual damascene process is provided to efficiently control the oxidation of an interconnection pad by performing a test process after photoresist or a nitride layer is easily deposited. CONSTITUTION: An interlayer dielectric(22) is selectively patterned. The interconnection and the interconnection pad(21) are formed in the patterned region. A capping layer(23) is formed on the resultant structure. A passivation layer(24) is formed on the capping layer to open a pad region. The photoresist(26) or nitride layer is formed as an interconnection oxidation control layer on the resultant structure including the pad region. The interconnection pad is tested by using a probe tip(27).
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