发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for fabricating a semiconductor device is provided to eliminate a gate insulation layer damaged by a plasma process while removing polymer, and to control a threshold voltage of a transistor by controlling the eliminated thickness of the gate insulation layer. CONSTITUTION: The gate insulation layer(22), a polysilicon layer(23), a tungsten layer(24), the first insulation layer(25) and the second insulation layer(26) are sequentially deposited on a semiconductor substrate(21). The polysilicon layer, the tungsten layer, the first insulation layer and the second insulation layer are selectively removed to form a gate electrode. A predetermined thickness of the gate insulation layer is eliminated while the polymer is removed. A sidewall insulation layer(27) and a spacer(28) are formed on both side surfaces of the stacked structure of the gate electrode. A source/drain is formed in the surface of the semiconductor substrate.
申请公布号 KR20030001586(A) 申请公布日期 2003.01.08
申请号 KR20010036363 申请日期 2001.06.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SUNG, YONG GYU
分类号 H01L21/334;(IPC1-7):H01L21/334 主分类号 H01L21/334
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