| 摘要 |
PURPOSE: A method for fabricating a metal gate of a semiconductor device is provided to improve an electrical characteristic by preventing a metal gate from being damaged by cleaning chemicals and by precisely eliminating polymer. CONSTITUTION: A gate oxide layer(22) is formed on a semiconductor substrate(21). A gate poly layer(23) and a gate metal layer(24) are formed on the gate oxide layer. The gate poly layer and the gate metal layer are selectively etched to form the metal gate. A subsequent process using a cleaning solution which includes chemicals by 3 percent such that the chemicals have an etch rate of 30 angstrom/minute regarding an oxide layer is performed to eliminate the polymer generated in the process for etching the metal gate.
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