| 摘要 |
PROBLEM TO BE SOLVED: To provide an adhesive sheet and a pasting material, hardly giving any bad effect to a semiconductor. SOLUTION: This pasting material 1A is used by pasting it on a semiconductor production device, and has a constitution of pasting a releasing sheet 3A having a releasing sheet substrate 31 and a releasing agent layer 32 on an adhesive sheet 2A having an adhesive sheet substrate 21 and an adhesive layer 22 so as to make the adhesive layer 22 in contact with the releasing agent layer 32. In the pasting material 1A, the amount of silicone in the adhesive sheet 2A is <=500μg/m<2> . The total amount of NOX<-> , Cl<-> , PO4 <3-> , F<-> , K<+> , Na<+> and Ca<2+> contained in the adhesive sheet 2A is preferably <=20 mg/m<2> . The amount of gas generated for 30 min at 85 deg.C is preferably <=20 mg/m<2> in the adhesive sheet 2A.
|
