| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for puling a silicon single crystal which is based on a CZ method and by which a high quality silicon single crystal free from distortions or defects in the crystal can be easily and reliably pulled with a high speed even when the crystal has a large diameter, and to provide a pulling device suitably used for the same. SOLUTION: When the silicon single crystal is pulled by the Czochralski method in which a cusp field is applied, the silicon single crystal is pulled under conditions that the temperature at the inner wall contacting with silicon melt of the bottom par of a crucible is adjusted to be higher than that at the inner side wall of the crucible and the temperature distribution at the bottom of the crucible is such that the temperature at the bottom of the crucible becomes lower from the center of the crucible toward the radial direction. Further, a bottom heater 7 and a side heater 4 are arranged so as to independently heat the bottom part and the side part of the crucible, respectively, to realize the temperature distribution mentioned above, and a radiation cover 6 for suppressing the radiant heat dissipation from the free surface of a silicon melt L1 and the upper end part of the crucible is arranged above the crucible.
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