| 摘要 |
PURPOSE: A trench isolation layer formation method of semiconductor devices is provided to prevent a degradation of a gate oxide layer and residues by removing a moat generated at edge portions of an active region. CONSTITUTION: A trench mask pattern including a pad oxide layer(24) and a polish stopping layer(26) made of nitride is formed on a silicon substrate(20). A trench is formed by etching the exposed silicon substrate using the trench mask pattern. An insulating layer for filling the trench is formed on the resultant structure. A trench isolation layer(22) is formed to expose the polish stopping layer(26) by planarizing the insulating layer using a CMP(Chemical Mechanical Polishing). The polish stopping layer(26) is wet-etched and the remaining polish stopping layer(26) is removed by an anisotropic etching.
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