| 摘要 |
PROBLEM TO BE SOLVED: To individually control the wavelength and the output of semiconductor laser when converting light emitted from a semiconductor laser element to second higher harmonics by a nonlinear optical element. SOLUTION: A light receiving element 7 and an electrode pattern 4 are formed on a silicon substrate 1, and an AlGaAs system wavelength variable semiconductor laser element 2 which has a light output control terminal 2a, a wavelength control terminal 2b and a common terminal 2c is mounted on the silicon substrate 1 through an AuSn solder material 5 by junction down, and a nonlinear optical element 3 having a polarization inverted structure 3a which has an LiNbO3 as the main material and is formed on the surface with about 3 μm period and a waveguide 3b which is formed with about 3 μm width by the proton exchange method is mounted on the silicon substrate 1 with a transparent resin 6 between them so that the waveguide 3b may be on the side of the silicon substrate 1. |
