METHOD FOR DEPOSITION OF ALUMINUM OXIDE THIN FILM, AND METHOD FOR DEPOSITION OF ALUMINUM NITRIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a film deposition method of improved isolation voltage for depositing an aluminum oxide thin film or an aluminum nitride thin film by reactive sputtering. SOLUTION: A pulse power source is used, and sputter-gas pressure is made to 0.08-0.15 Pa. A greater effect can be obtained if positive pulse period is made to 0.5-1μs. It is desirable to regulate sputter-gas pressure to >=0.25 Pa at the initiation of film deposition and 0.08-0.15 Pa after the initiation of film deposition, respectively. Film stress can be reduced by the regulation of the sputter-gas pressure to 0.08-0.15 Pa, and resultantly leakage current can be reduced and isolation voltage can be improved. Ions made incident upon a substrate can be reduced and the occurrence of abnormal discharge can be prevented by the regulation of the positive pulse period of 0.5-1μs. By the regulation of the pressure to >=0.25 Pa at the initiation of film deposition, the occurrence of roughness at the interface between the substrate and the resultant film can be prevented.