| 摘要 |
PURPOSE: A method for forming an align key of a semiconductor device is provided to easily control overlay and to improve yield of mask processing by controlling the thickness of an align key during a silane deposition processing. CONSTITUTION: In mask processing, an overlay control is required sequentially to an ISO(Isolation) mask, a gate mask, the first LPC(Landing Plug Contact) mask, the first BLC(Bit Line Contact) mask, the second BLC mask, the second LPC mask, and an SN(Storage Node) mask. At this time, an align key is formed in the BLC mask processes. The depositing thickness of the align key is controlled during a silane(21) deposition processing, thereby stably using the align key. The deposited thickness of the silane(21) is 1200 Å.
|
