METHOD FOR FILLING OXYGEN IN TITANIUM NITRIDE LAYER

摘要

PURPOSE: A method for filling oxygen in a titanium nitride layer is provided to reduce contact resistance and an electrical characteristic by filling oxygen in a grain boundary of the titanium nitirde layer and by minimizing oxidation of the titanium nitride layer. CONSTITUTION: A substrate having the titanium nitride layer(19) is loaded into a reaction chamber. Plasma source gas is supplied to the inside of the reaction chamber to activate plasma. Oxygen source gas is supplied to the inside of the reaction chamber and an annealing process is performed by using plasma activation energy. The plasma source gas is either one of Ar, Ne, N2 or O2 gas. The oxygen source gas is either one of O2, N2O, H2O or H2O2 gas.