| 摘要 |
PURPOSE: A method for fabricating a storage node contact is provided to improve uniformity of a layer by separating an etch process of an anti-reflective coating(ARC) from a process for forming the storage node contact so that the ARC has low selectivity. CONSTITUTION: A plug(15) is formed on a semiconductor substrate(10). An etch barrier layer and an interlayer dielectric are sequentially formed on the resultant structure including the plug. The ARC(18) and a photoresist pattern(19) are sequentially formed on the interlayer dielectric. The ARC is etched by using the photoresist pattern as a mask wherein the ARC substantially doesn't have etch selectivity regarding the interlayer dielectric. The interlayer dielectric and the etch barrier layer are selectively etched to form a storage node contact hole(20) exposing the plug by an in-situ process.
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