PHOTORESIST REMOVER COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a safe and simple remover composition having excellent performance to remove photoresist residue after dry etching of a ferroelectric thin film in a step for manufacturing a ferroelectric memory and having no corrosive action on ferroelectric materials, other wiring materials, insulating films, etc. SOLUTION: The remover comprises an aqueous solution containing oxalic acid and a polyoxyethylene alkyl ether sulfate and/or a polyoxyethylene alkylphenyl ether sulfate.