SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a method for fabricating the same are provided to improve reliability and productivity by preventing a diffusion effect of fluorine of an interlayer dielectric including fluorine. CONSTITUTION: A lower structure such as a gate electrode or a bit line is formed on a semiconductor substrate(10). A diffusion region such as a source region or a drain region is formed within the semiconductor substrate(10). An interlayer dielectric(12) is stacked on the semiconductor substrate(10). A plurality of contact plugs(14) are formed within a via hole(13) of the interlayer dielectric(12). A plurality of metal wires(16) are arrayed on the interlayer dielectric(12). The metal wires(16) are electrically connected with the contact plugs(14). A barrier(18) are stacked on the metal wires(16) and the interlayer dielectric(12). A fluorine silicate glass layer(20) is stacked on the barrier(18). A diffusion barrier(30) is formed on the fluorine silicate glass layer(20). A diffusion barrier layer(40) can be formed on the diffusion barrier(30).