发明名称 |
METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for forming a capacitor of semiconductor devices is provided to increase capacitance by preventing losses of a polysilicon layer as a lower electrode. CONSTITUTION: A lower layer(2) having a plug(3) is formed on a silicon substrate(1). A sacrificial layer(4) is formed on the lower layer(2). A contact hole(5) for defining a lower electrode formation region is formed to expose the surface of the plug(3) by selectively etching the sacrificial layer(4). A polysilicon layer(6) is deposited at inner walls of the contact hole(5) and on the sacrificial layer(4). A photoresist layer(7) is entirely filled into the contact hole(5) and partially removed to expose the polysilicon layer(6) by etch back. The exposed polysilicon layer(6) is selectively removed to expose the sacrificial layer by etch back using Cl2-containing gas, such as Cl2/BCl3 or Cl2/N2.
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申请公布号 |
KR20030001976(A) |
申请公布日期 |
2003.01.08 |
申请号 |
KR20010037849 |
申请日期 |
2001.06.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHO, SEONG YUN;LEE, GYEONG WON |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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主权项 |
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地址 |
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