| 摘要 |
PURPOSE: A copper wire formation method of semiconductor devices is provided to improve a uniformity of a copper wire by using a dual damascene processing. CONSTITUTION: A lower metal wire(22) is formed on a semiconductor substrate(21). After forming an interlayer dielectric(23) on the resultant structure, a via hole and a trench are sequentially formed by selectively etching the interlayer dielectric(23) using a dual damascene processing. A barrier metal film(26) and a copper film(27) are sequentially formed on the resultant structure. A mask layer(28) is filled into the stepped region, thereby planarizing the resultant structure. A copper plug and a copper wire are formed in the via hole and the trench by simultaneously polishing the mask layer(28) and the copper film(27) using the surface of the interlayer dielectric(23) as an end point.
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