SEMICONDUCTOR DEVICE HAVING COPPER WIRING LAYER AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device having a copper wiring layer and a method for fabricating the same are provided to prevent the migration of copper metal by forming a seam within a tungsten plug. CONSTITUTION: An interlayer dielectric(103) having the first contact hole(102) is formed on an upper surface of a semiconductor substrate(101). The interlayer dielectric(103) is formed with a silicon oxide layer. A plug(105a) having a seam(107) is formed within the first contact hole(102). An entrance portion of the seam(107) is filled with a metal layer(109). The plug(105a) is formed with a tungsten layer. The metal layer(109) is used for preventing migration of copper. An insulating layer pattern(111) having the second contact hole(113) is formed on the interlayer dielectric(103). A copper metal wiring layer(115) is formed within the second contact hole(113).